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SUD19N20-90
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
200
2
4
± 100
V
nA
V DS = 200 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 200 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 200 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current b
I D(on)
V DS = ? 5 V, V GS = 10 V
V GS = 10 V, I D = 5 A
40
0.075
0.090
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 5 A, T J = 125 °C
V GS = 10 V, I D = 5 A, T J = 175 °C
V GS = 6 V, I D = 5 A
0.082
0.190
0.260
0.105
?
Forward
Transconductance b
g fs
V DS = 15 V, I D = 19 A
35
S
Dynamic a
Input Capacitance
C iss
1800
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 25 V, F = 1 MHz
V DS = 100 V, V GS = 10 V, I D = 19 A
180
80
34
8
12
51
pF
nC
Gate Resistance
R g
0.5
2.9
?
Turn-On Delay
Time c
t d(on)
15
25
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 100 V, R L = 5.2 ?
I D ? 19 A, V GEN = 10 V, R g = 2.5 ?
50
30
60
75
45
90
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 °C)
Pulsed Current
I SM
50
A
Diode Forward Voltage
b
V SD
I F = 19 A, V GS = 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = 19 A, dI/dt = 100 A/μs
180
250
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71767
S10-2245-Rev. E, 04-Oct-10
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